Transparent High-Performance Thin Film Transistors from Solution-Processed SnO2/ZrO2Gel-like Precursors
نویسندگان
چکیده
منابع مشابه
Solution processed high performance pentacene thin-film transistors.
High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm(2) V(-1) s(-1) with an on/off ratio of 10(6).
متن کاملLow-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors
A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost co...
متن کاملHigh Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors
Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the el...
متن کاملLow-Temperature, Solution-Processed, Transparent Zinc Oxide-Based Thin-Film Transistors for Sensing Various Solvents
A low temperature solution-processed thin-film transistor (TFT) using zinc oxide (ZnO) film as an exposed sensing semiconductor channel was fabricated to detect and identify various solution solvents. The TFT devices would offer applications for low-cost, rapid and highly compatible water-soluble detection and could replace conventional silicon field effect transistors (FETs) as bio-sensors. In...
متن کاملBias-stress-stable solution-processed oxide thin film transistors.
We generated a novel amorphous oxide semiconductor thin film transistor (AOS-TFT) that has exellent bias-stress stability using solution-processed gallium tin zinc oxide (GSZO) layers as the channel. The cause of the resulting stable operation against the gate bias-stress was studied by comparing the TFT characteristics of the GSZO layer with a tin-doped ZnO (ZTO) layer that lacks gallium. By p...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced Materials
سال: 2014
ISSN: 0935-9648
DOI: 10.1002/adma.201402185